METHOD OF MAKING A SEMICONDUCTOR LAYER HAVING AT LEAST TWO DIFFERENT THICKNESSES

摘要

A method is provided for producing a semiconductor layer having at least two different thicknesses from a stack of the semiconductor on insulator type including at least one substrate on which an insulating layer and a first semiconductor layer are successively disposed, the method including etching the first layer so that said layer is continuous and includes at least one first region having a thickness less than that of at least one second region; oxidizing the first layer to form an electrically insulating oxide film on a surface thereof so that, in the first region, the oxide film extends as far as the insulating layer; partly removing the oxide film to bare the first layer outside the first region; forming a second semiconductor layer on the stack, to form, with the first layer, a third continuous semiconductor layer having a different thickness than that of the first and second regions.

主权项

1. A method for producing a semiconductor layer having at least two different thicknesses (TSi1, TSi2) from a stack of the semiconductor on insulator type comprising at least one substrate on which an insulating layer and a first semiconductor layer are successively disposed, the method comprising at least a sequence comprising the following steps:
etching of the first semiconductor layer so that the first semiconductor layer is continuous and comprises at least one first region the thickness (tsi1) of which is less than the thickness (tSi2) of at least one second region; oxidation of the first semiconductor layer in order to form an electrically insulating oxide film on the surface of the first semiconductor layer so that, in the first region, the oxide film extends as far as the insulating layer and so that in the second region the oxide film does not extend as far as the insulating layer; partial removal of the oxide film so as to bare the first semiconductor layer outside the first region and to keep at least part of the oxide film in the first region; formation on the stack of layers of a second semiconductor layer so as to form, with the first semiconductor layer, a third continuous semiconductor layer having different thicknesses (TSi1, TSi2).