METHODS OF FORMING THREE-DIMENSIONALLY INTEGRATED SEMICONDUCTOR SYSTEMS INCLUDING PHOTOACTIVE DEVICES AND SEMICONDUCTOR-ON-INSULATOR SUBSTRATES

摘要

Three-dimensionally integrated semiconductor systems include a photoactive device operationally coupled with a current/voltage converter on a semiconductor-on-insulator (SeOI) substrate. An optical interconnect is operatively coupled to the photoactive device. A semiconductor device is bonded over the SeOI substrate, and an electrical pathway extends between the current/voltage converter and the semiconductor device bonded over the SeOI substrate. Methods of forming such systems include forming a photoactive device on an SeOI substrate, and operatively coupling a waveguide with the photoactive device. A current/voltage converter may be formed over the SeOI substrate, and the photoactive device and the current/voltage converter may be operatively coupled with one another. A semiconductor device may be bonded over the SeOI substrate and operatively coupled with the current/voltage converter.

主权项

1. A three-dimensionally integrated semiconductor system, comprising:
a semiconductor-on-insulator (SeOI) substrate comprising:
a layer of semiconductor material; anda layer of electrically insulating material disposed adjacent a major surface of the layer of semiconductor material; at least one photoactive device formed on the layer of semiconductor material of the SeOI substrate; and at least one optical interconnect comprising a portion of the layer of semiconductor material of the SeOI substrate, the at least one optical interconnect operatively coupled to the at least one photoactive device; at least one current/voltage converter formed over the layer of semiconductor material of the SeOI substrate; at least one electrical pathway extending between the at least one photoactive device and the at least one current/voltage converter; at least one semiconductor device bonded over the SeOI substrate; and at least one electrical pathway extending between the at least one current/voltage converter and the at least one semiconductor device bonded over the SeOI substrate.