发明名称 |
AMORPHOUS METAL THIN-FILM NON-LINEAR RESISTOR |
摘要 |
An amorphous metal thin-film non-linear resistor (AMNR) is provided. The AMNR is an electronic device possessing symmetric non-linear current-voltage (I-V) characteristics, an exemplary configuration of which may comprise three sequentially deposited layers which include a lower amorphous metal thin-film (AMTF) interconnect, a thin-film insulator located on top of the AMTF interconnect, and two upper conductive contacts located on top of the insulator and disposed in the same physical plane. |
申请公布号 |
US2014368310(A1) |
申请公布日期 |
2014.12.18 |
申请号 |
US201314066945 |
申请日期 |
2013.10.30 |
申请人 |
Cowell, III E. William |
发明人 |
Cowell, III E. William |
分类号 |
H01C1/142;H01C17/12 |
主分类号 |
H01C1/142 |
代理机构 |
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代理人 |
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主权项 |
1. An amorphous metal thin-film nonlinear resistor possessing symmetric nonlinear current-voltage characteristics, comprising:
an amorphous metal thin-film interconnect; an insulator layer disposed over the interconnect; and first and second electrical contacts disposed over a selected surface of the insulator layer and interconnect, each connector having at least a respective portion thereof overlapping a respective portion of the interconnect to provide electrical communication from the first contact through the insulator layer and amorphous metal interconnect to the second contact,
whereby a voltage applied across the first and second electrical contacts results in an electrical current that varies nonlinearly with, and symmetrically with polarity of, applied voltage. |
地址 |
Corvallis OR US |