发明名称 AMORPHOUS METAL THIN-FILM NON-LINEAR RESISTOR
摘要 An amorphous metal thin-film non-linear resistor (AMNR) is provided. The AMNR is an electronic device possessing symmetric non-linear current-voltage (I-V) characteristics, an exemplary configuration of which may comprise three sequentially deposited layers which include a lower amorphous metal thin-film (AMTF) interconnect, a thin-film insulator located on top of the AMTF interconnect, and two upper conductive contacts located on top of the insulator and disposed in the same physical plane.
申请公布号 US2014368310(A1) 申请公布日期 2014.12.18
申请号 US201314066945 申请日期 2013.10.30
申请人 Cowell, III E. William 发明人 Cowell, III E. William
分类号 H01C1/142;H01C17/12 主分类号 H01C1/142
代理机构 代理人
主权项 1. An amorphous metal thin-film nonlinear resistor possessing symmetric nonlinear current-voltage characteristics, comprising: an amorphous metal thin-film interconnect; an insulator layer disposed over the interconnect; and first and second electrical contacts disposed over a selected surface of the insulator layer and interconnect, each connector having at least a respective portion thereof overlapping a respective portion of the interconnect to provide electrical communication from the first contact through the insulator layer and amorphous metal interconnect to the second contact, whereby a voltage applied across the first and second electrical contacts results in an electrical current that varies nonlinearly with, and symmetrically with polarity of, applied voltage.
地址 Corvallis OR US