SEMICONDUCTOR MEMORY DEVICE

摘要

According to one embodiment, the tunnel insulating film contains silicon, oxygen, and nitrogen, and including at least a first tunnel insulating film provided on the semiconductor channel side and a second tunnel insulating film provided on the charge storage film side. The first insulating film is provided on a surface of the first tunnel insulating film on opposite side from a surface on the semiconductor channel side. The first insulating film has a lower surface density of oxygen atoms than the first tunnel insulating film, and has a higher permittivity than silicon nitride.

主权项

1. A semiconductor memory device comprising:
a semiconductor channel; an electrode layer; a charge storage film provided between the semiconductor channel and the electrode layer; a tunnel insulating film provided between the semiconductor channel and the charge storage film, containing silicon, oxygen, and nitrogen, and including at least a first tunnel insulating film provided on the semiconductor channel side and a second tunnel insulating film provided on the charge storage film side; and a first insulating film provided on a surface of the first tunnel insulating film on opposite side from a surface on the semiconductor channel side, the first insulating film having a lower surface density of oxygen atoms than the first tunnel insulating film, and having a higher permittivity than silicon nitride.