SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

A trench (TR) reaches a first conductivity-type first layer (81) by penetrating a first conductivity-type third layer (83) and a second conductivity-type second layer (82) from a second main surface (P2). A contact region (84) extends to a position deeper than the interface between the first layer (81) and the second layer (82) by penetrating the third layer (83) and the second layer (82) from the second main surface (P2), and the contact region is in contact with an embedding region (85). An impurity concentration of the contact region (84) is higher than that of the second layer (82). The embedding region (85) has: a first portion (85a) sandwiched between the contact region (84) and a first main surface (P1) in the thickness direction; and a second portion (85b) extending closer to the trench (TR) from the first portion (85a).