SEMICONDUCTOR DEVICE HAVING STRAINED CHANNEL LAYER AND METHOD OF MANUFACTURING THE SAME

摘要

Provided are a semiconductor device including a strained channel layer and a manufacturing method thereof. The semiconductor device including the strained channel layer includes: a substrate which includes a first region (I) and a second region (II); a buffer layer which is formed on the substrate; a first well which is formed in the buffer layer in the first region (I); a second well which is formed in the buffer layer in the second region (II); a first channel layer which is formed on the first well; and a second channel layer which is formed on the second well. The lattice constant of the first channel layer is smaller than the lattice constant of the buffer layer. The lattice constant of the second channel layer is larger than the lattice constant of the buffer layer.