发明名称 INSPECTION METHOD FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an inspection method for a semiconductor device including an electric charge removing step for removing electric charges of an insulating film or a semi-insulating film in a termination structure.SOLUTION: An inspection method for a semiconductor device includes a first inspection step for inspecting breakdown strength of a semiconductor device in which a cell structure 10, where a main current flows, and a termination structure 12 enclosing the cell structure are formed on a substrate 14, an electric charge removing step for removing an electric charge of a surface layer 39 which is formed of an insulating film 36 or a semi-insulating film 38 on the substrate of the termination structure after the first inspection step, and a second inspection step for inspecting breakdown strength of the semiconductor device after the electric charge removing step.
申请公布号 JP2014238332(A) 申请公布日期 2014.12.18
申请号 JP20130121043 申请日期 2013.06.07
申请人 MITSUBISHI ELECTRIC CORP 发明人 OTSUKI EIKO;YOSHIURA YASUHIRO;SADAMATSU YASUSHI
分类号 G01R31/26;H01L21/336;H01L21/66;H01L29/06;H01L29/78;H01L29/861;H01L29/868 主分类号 G01R31/26
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