发明名称 ENERGY STORAGE DEVICE AND ENERGY STORAGE MODULE
摘要 Provided is an energy storage device provided with a negative electrode including a negative substrate having a surface, and a negative composite layer formed on the surface of the negative substrate and including a negative active material; a positive electrode including a positive substrate, and a positive composite layer formed on the positive substrate and including a positive active material; and a separator placed between the positive electrode and the negative electrode. 10% cumulative diameter D10 in the particle size distribution of the negative active material on a volume basis is 1.3 μm or more, and 90% cumulative diameter D90 in the particle size distribution of the negative active material on a volume basis is 8.9 μm or less. The surface of the negative substrate has a center line roughness Ra of 0.205 μm or more and 0.781 μm or less, and has a center line roughness Ra to a ten-point mean height Rz of 0.072 or more and 0.100 or less.
申请公布号 US2014370393(A1) 申请公布日期 2014.12.18
申请号 US201414306048 申请日期 2014.06.16
申请人 GS Yuasa International Ltd. 发明人 Nakai Kenta;MIYAZAKI Akihiko;KAKO Tomonori;MORI Sumio
分类号 H01G11/26;H01G11/32;H01M10/0525;H01G11/06;H01M4/13;H01M4/136 主分类号 H01G11/26
代理机构 代理人
主权项 1. An energy storage device comprising: a negative electrode including a negative substrate having a surface, and a negative composite layer formed on the surface of the negative substrate and including a negative active material; a positive electrode including a positive substrate, and a positive composite layer formed on the positive substrate and including a positive active material; and a separator placed between the positive electrode and the negative electrode, wherein 10% cumulative diameter D10 in the particle size distribution of the negative active material on a volume basis is 1.3 μm or more, and 90% cumulative diameter D90 in the particle size distribution of the negative active material on a volume basis is 8.9 μm or less, and the surface of the negative substrate has a center line roughness Ra of 0.205 μm or more and 0.781 μm or less, and has a center line roughness Ra to a ten-point mean height Rz of 0.072 or more and 0.100 or less.
地址 Kyoto-shi JP