发明名称 |
ENERGY STORAGE DEVICE AND ENERGY STORAGE MODULE |
摘要 |
Provided is an energy storage device provided with a negative electrode including a negative substrate having a surface, and a negative composite layer formed on the surface of the negative substrate and including a negative active material; a positive electrode including a positive substrate, and a positive composite layer formed on the positive substrate and including a positive active material; and a separator placed between the positive electrode and the negative electrode. 10% cumulative diameter D10 in the particle size distribution of the negative active material on a volume basis is 1.3 μm or more, and 90% cumulative diameter D90 in the particle size distribution of the negative active material on a volume basis is 8.9 μm or less. The surface of the negative substrate has a center line roughness Ra of 0.205 μm or more and 0.781 μm or less, and has a center line roughness Ra to a ten-point mean height Rz of 0.072 or more and 0.100 or less. |
申请公布号 |
US2014370393(A1) |
申请公布日期 |
2014.12.18 |
申请号 |
US201414306048 |
申请日期 |
2014.06.16 |
申请人 |
GS Yuasa International Ltd. |
发明人 |
Nakai Kenta;MIYAZAKI Akihiko;KAKO Tomonori;MORI Sumio |
分类号 |
H01G11/26;H01G11/32;H01M10/0525;H01G11/06;H01M4/13;H01M4/136 |
主分类号 |
H01G11/26 |
代理机构 |
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代理人 |
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主权项 |
1. An energy storage device comprising:
a negative electrode including a negative substrate having a surface, and a negative composite layer formed on the surface of the negative substrate and including a negative active material; a positive electrode including a positive substrate, and a positive composite layer formed on the positive substrate and including a positive active material; and a separator placed between the positive electrode and the negative electrode, wherein 10% cumulative diameter D10 in the particle size distribution of the negative active material on a volume basis is 1.3 μm or more, and 90% cumulative diameter D90 in the particle size distribution of the negative active material on a volume basis is 8.9 μm or less, and the surface of the negative substrate has a center line roughness Ra of 0.205 μm or more and 0.781 μm or less, and has a center line roughness Ra to a ten-point mean height Rz of 0.072 or more and 0.100 or less. |
地址 |
Kyoto-shi JP |