发明名称 PHOTO DETECTOR DEVICE, PHOTO SENSOR AND SPECTRUM SENSOR
摘要 A photodetector device includes: a first semiconductor region of a first conductivity type electrically connected to a first external electrode: a second semiconductor region of a second conductivity type formed on the first semiconductor region; a third semiconductor region of the first conductivity type formed on the second semiconductor region; and a plurality of fourth semiconductor regions of the second conductivity type formed on the second semiconductor region, each of the plurality of fourth semiconductor regions being surrounded by the third semiconductor region, including a second conductivity type impurity having a concentration higher than a concentration of the second semiconductor region, and electrically connected to a second external electrode.
申请公布号 US2014367819(A1) 申请公布日期 2014.12.18
申请号 US201414323987 申请日期 2014.07.03
申请人 Seiko Epson Corporation 发明人 Nakamura Noriyuki
分类号 H01L31/0232;H01L27/144 主分类号 H01L31/0232
代理机构 代理人
主权项 1. A directional photo sensor comprising: a photodetector device; and an angle restriction filter that transmits light incident thereon in an incident angle range toward the photodetector device; wherein the photodetector device includes: a first semiconductor region of a first conductivity type; anda second semiconductor region of a second conductivity type formed on the first semiconductor region; wherein at least one portion of the angle restriction filter is formed from a conductive material and electrically connected to the second semiconductor region.
地址 Shinjuku-ku JP