METHODS OF FORMING GATE STRUCTURES FOR CMOS BASED INTEGRATED CIRCUIT PRODUCTS AND THE RESULTING DEVICES

摘要

One illustrative method disclosed herein includes forming replacement gate structures for an NMOS transistor and a PMOS transistor by forming gate insulation layers and a first metal layer for the devices from the same materials and selectively forming a metal-silicide material layer only on the first metal layer for the NMOS device but not on the PMOS device. One example of a novel integrated circuit product disclosed herein includes an NMOS device and a PMOS device wherein the gate insulation layers and the first metal layer of the gate structures of the devices are made of the same material, the gate structure of the NMOS device includes a metal silicide material positioned on the first metal layer of the NMOS device, and a second metal layer that is positioned on the metal silicide material for the NMOS device and on the first metal layer for the PMOS device.

主权项

1. A method of forming replacement gate structures for an NMOS transistor and a PMOS transistor, comprising:
performing at least one etching process to remove a sacrificial gate structure for said NMOS transistor and a sacrificial gate structure for said PMOS transistor to thereby define an NMOS gate cavity and a PMOS gate cavity; depositing a gate insulation layer in said NMOS gate cavity and in said PMOS gate cavity; depositing a first metal layer on said gate insulation layer in said NMOS gate cavity and in said PMOS gate cavity; performing at least one process operation to selectively form a metal-silicide material layer only on said first metal layer within said NMOS gate cavity but not on said first metal layer within said PMOS gate cavity; and forming gate cap layers within said NMOS and PMOS gate cavities.