| 发明名称 |
Method of Fabricating a FinFET Device |
| 摘要 |
A semiconductor device includes a substrate and a plurality of fin structures. A first fin structure and a second fin structure are spaced at a distance D1. A first dummy fin structure is adjacent to the first fin structure, and a second dummy fin structure is adjacent to the second fin structure. The device further includes an isolation layer over the substrate and the first and second dummy fin structures, and surrounding the first and second fin structures. The fin structures are arranged such that a distance D2 between the first fin structure and the first dummy fin structure is greater than the distance D1. |
| 申请公布号 |
US2014367785(A1) |
申请公布日期 |
2014.12.18 |
| 申请号 |
US201414477212 |
申请日期 |
2014.09.04 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Shieh Ming-Feng;Chen Chen-Yu |
| 分类号 |
H01L27/088;H01L29/06 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a substrate; a first fin structure and a second fin structure spaced at a distance D1; a first dummy fin structure adjacent to the first fin structure, and a second dummy fin structure adjacent to the second fin structure; and an isolation layer over the substrate and the first and second dummy fin structures, and surrounding the first and second fin structures; wherein a distance D2 between the first fin structure and the first dummy fin structure is greater than the distance D1. |
| 地址 |
Hsin-Chu TW |
