| 摘要 |
Provided are a semiconductor memory device and ECC method thereof, the semiconductor memory device comprising: a first non-volatile memory; a second non-volatile memory of a type different from the type of the first non-volatile memory; a controller; a first error correction circuit configured to correct the error of the first written data being programmed in the first non-volatile memory; and a second error correction circuit contained in the controller, and configured to correct the error of the first written data and the error of second written data being programmed in the second non-volatile memory based on an error correction algorithm different from the error correction algorithm of the first error correction circuit. One of the first error correction circuit and the second error correction circuit is used according to the attribute of the first written data to generate error correction data used for correcting the error of the first written data. |
