发明名称 POLYMER FOR SEMICONDUCTOR LITHOGRAPHY AND METHOD FOR PRODUCING THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To provide a hydroxyphenyl (meth)acrylate (co)polymer which has good solubility in a solvent and shows sufficiently few defects when used in a semiconductor lithography solution, and a method for producing the same.SOLUTION: Provided is a (co)polymer which is produced by radical polymerization in a reactor with a reaction liquid temperature controlled between 70 to 100°C, and is used in a semiconductor lithography process. A peak area of a high polymer component, having a molecular weight five times as large as a weight average molecular weight (Mw) of the (co)polymer as measured by gel permeation chromatography (GPC), is 0.2% or less relative to the total peak area.</p>
申请公布号 JP2014237847(A) 申请公布日期 2014.12.18
申请号 JP20140167047 申请日期 2014.08.20
申请人 MITSUBISHI RAYON CO LTD 发明人 TSUCHIYA SEIJI;MAEDA SHINICHI;MATSUMOTO DAISUKE;OSHIKIRI TOMOYA;YASUDA ATSUSHI
分类号 C08F20/30;C08F2/00 主分类号 C08F20/30
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