PLASMA PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

摘要

Provided are a plasma processing method and a substrate processing apparatus. The plasma processing method includes mounting at least one first plasma source and at least one second plasma source on a chamber, supplying a first gas to the first plasma source, supplying a second gas different from the first gas to the second plasma source, applying power to the first plasma source to generate first plasma, applying power to the second plasma source to generate second plasma, and processing a substrate disposed inside the chamber using the first and second plasma.

主权项

1. A plasma processing method comprising:
mounting one or more first plasma sources and one or more second plasma sources on a chamber; supplying a first gas to the first plasma sources; supplying a second gas different from the first gas to the second plasma sources; applying power to the first plasma sources to generate first plasma; applying power to the second plasma sources to generate second plasma; and processing a substrate disposed inside the chamber using the first plasma and the second plasma.