发明名称 METHODS OF FORMING A PATTERN AND DEVICES FORMED BY THE SAME
摘要 The inventive concepts provide methods of forming a pattern. In the method, a block copolymer layer may be formed on a neutral layer having an uneven structure and then phase separation is induced. The neutral layer may have an affinity for all of a hydrophilic polymer and a hydrophobic polymer, so that vertical cultivation of phases of the block copolymer may be realized on the uneven structure. Thus, a self-assembled phenomenon may be induced.
申请公布号 US2014370712(A1) 申请公布日期 2014.12.18
申请号 US201414220440 申请日期 2014.03.20
申请人 KIM Eunsung;NAM Jaewoo;SHIN Chulho 发明人 KIM Eunsung;NAM Jaewoo;SHIN Chulho
分类号 H01L21/027 主分类号 H01L21/027
代理机构 代理人
主权项 1. A method of forming a pattern, the method comprising: forming a neutral layer having an uneven structure over a substrate; coating a block copolymer layer on the neutral layer; phase-separating the block copolymer layer to form a plurality of first patterns spaced apart from each other and a second pattern filling a space between the first patterns; removing the first patterns or the second pattern; and performing an etching process using a not-removed pattern of the first patterns or the second pattern as an etch mask.
地址 Seoul KR
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