发明名称 |
METHODS OF FORMING A PATTERN AND DEVICES FORMED BY THE SAME |
摘要 |
The inventive concepts provide methods of forming a pattern. In the method, a block copolymer layer may be formed on a neutral layer having an uneven structure and then phase separation is induced. The neutral layer may have an affinity for all of a hydrophilic polymer and a hydrophobic polymer, so that vertical cultivation of phases of the block copolymer may be realized on the uneven structure. Thus, a self-assembled phenomenon may be induced. |
申请公布号 |
US2014370712(A1) |
申请公布日期 |
2014.12.18 |
申请号 |
US201414220440 |
申请日期 |
2014.03.20 |
申请人 |
KIM Eunsung;NAM Jaewoo;SHIN Chulho |
发明人 |
KIM Eunsung;NAM Jaewoo;SHIN Chulho |
分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a pattern, the method comprising:
forming a neutral layer having an uneven structure over a substrate; coating a block copolymer layer on the neutral layer; phase-separating the block copolymer layer to form a plurality of first patterns spaced apart from each other and a second pattern filling a space between the first patterns; removing the first patterns or the second pattern; and performing an etching process using a not-removed pattern of the first patterns or the second pattern as an etch mask. |
地址 |
Seoul KR |