发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced. |
申请公布号 |
US2014370657(A1) |
申请公布日期 |
2014.12.18 |
申请号 |
US201414477115 |
申请日期 |
2014.09.04 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
YAMAZAKI Shunpei;SATO Yuhei;SATO Keiji;MARUYAMA Tetsunori;KOEZUKA Junichi |
分类号 |
H01L21/324;H01L29/66;H01L21/02 |
主分类号 |
H01L21/324 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Atsugi-shi JP |