发明名称 OVER-VOLTAGE TOLERANT CIRCUIT AND METHOD
摘要 Over-voltage tolerant circuits and methods are provided. In one embodiment, the circuit includes a pull-up transistor coupled to an I/O pad, a sensing circuit coupled to the I/O pad and to a voltage supply (Vcc), the sensing circuit configured to sense a voltage applied to the pad (Vpad), a latch coupled to the sensing circuit to retain an output of the sensing circuit, and a selection circuit coupled to the sensing circuit through the latch. The selection circuit includes a first bias circuit to apply Vcc to a well and gate of the pull-up transistor, a second bias circuit to apply Vpad to the gate and the well of the pull-up transistor, and a non-overlap circuit configured to ensure the gate and the well of the pull-up transistor is substantially always driven by either the first or the second bias circuit depending on the output of the sensing circuit.
申请公布号 US2014368960(A1) 申请公布日期 2014.12.18
申请号 US201314037023 申请日期 2013.09.25
申请人 Cypress Semiconductor Corporation 发明人 DEO Supreet Bhanja;WILLIAMS Timothy;MADDEN Pat
分类号 H03K17/08 主分类号 H03K17/08
代理机构 代理人
主权项 1. A circuit comprising: a pull-up transistor coupled to an I/O pad of an electronic device; a sensing circuit coupled to the I/O pad and to a voltage supply (Vcc), the sensing circuit configured to sense a voltage applied to the pad (Vpad); a latch coupled to the sensing circuit and configured to retain an output of the sensing circuit; and a selection circuit coupled to the sensing circuit through the latch, the selection circuit comprising: a first bias circuit to apply Vcc to a well and gate of the pull-up transistor, and a second bias circuit to apply Vpad to the gate and the well of the pull-up transistor; anda non-overlap circuit configured to ensure the gate and the well of the pull-up transistor is substantially always driven by either the first or the second bias circuit depending on the output of the sensing circuit.
地址 San Jose CA US