SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

This semiconductor device manufacturing method includes: a step for depositing a thin film semiconductor layer (4) on a semiconductor substrate (1) with an insulating film (3) therebetween, said insulating film having been formed on a surface of the semiconductor substrate; a step for implanting first impurity ions into the thin film semiconductor layer under the conditions where a first impurity ion range becomes smaller than a thin film semiconductor layer film thickness obtained when the thin film semiconductor layer is deposited; and a step for selectively implanting second impurity ions into the thin film semiconductor layer with a dose quantity more than that of the first impurity ions. A diode (31) for detecting temperature is formed by means of a region (5) having the first impurity ions implanted therein, and a region (6) having the second impurity ions implanted therein, said regions being in the thin film semiconductor layer.