摘要 |
<p>PROBLEM TO BE SOLVED: To provide a production method of an SiC material capable of producing an SiC material in a short time, and improving yield, and to provide an SiC material laminate.SOLUTION: When producing an SiC material, after growing a p-type SiC layer on a seed crystal substrate, an n-type SiC layer is grown on the p-type SiC layer, and energy of laser is absorbed into the p-type SiC layer, and the n-type SiC layer is exfoliated from the seed crystal substrate side by laser lift-off.</p> |