发明名称 |
CASCODE STRUCTURES FOR GAN HEMTS |
摘要 |
A multi-stage transistor device is described. One embodiment of such a device is a dual-gate transistor, where the second stage gate is separated from a barrier layer by a thin spacer layer and is grounded through a connection to the source. In one embodiment the thin spacer layer and the second stage gate are placed in an aperture in a spacer layer. In another embodiment, the second stage gate is separated from a barrier layer by a spacer layer. The device can exhibit improved linearity and reduced complexity and cost. |
申请公布号 |
WO2014200643(A1) |
申请公布日期 |
2014.12.18 |
申请号 |
WO2014US37728 |
申请日期 |
2014.05.12 |
申请人 |
CREE, INC. |
发明人 |
SRIRAM, SAPTHARISHI;ALCORN, TERRY;RADULESCU, FABIAN;SHEPPARD, SCOTT |
分类号 |
H01L29/778;H01L29/40;H01L29/423 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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