| 摘要 |
PROBLEM TO BE SOLVED: To suppress cracking from occurring on a substrate of a semiconductor chip in a case where through electrodes are collectively arranged in a specified region of the substrate of the semiconductor chip.SOLUTION: Assuming that a direction parallel to major sides SID11, SID13 of a first semiconductor chip SC1 is a row direction while a direction vertical to the major sides SID11, SID13 is a column direction, each of a plurality of first through electrodes TSV1 is arranged on any of lattice points of m-row n-column (where m>n). In a cross section parallel to minor sides SID12, SID14 of the first semiconductor chip SC1, a center of a through electrode arrangement region TSVA1, which is a region formed by connecting the lattice points on an outermost periphery of the m-row n-column, is deviated in a first direction from centers of the minor sides SID12, SID14 of the first semiconductor chip SC1. |
