| 摘要 |
PROBLEM TO BE SOLVED: To provide a p-type semiconductor film comprising a novel Cu-Zn-Sn-(S,Se)-based compound semiconductor, and a photoelectric element using the p-type semiconductor film.SOLUTION: A p-type semiconductor film comprises a compound semiconductor mainly containing Cu, Zn, Sn and S and/or Se, and further containing an alkali metal element. In the p-type semiconductor film, the content of the alkali metal element on one surface is different from that of the alkali metal element on the other surface. In the p-type semiconductor film, the content of the alkali metal element on a surface of a hole extraction side is preferably higher than that of the alkali metal element on a surface of an electron extraction side. In a photoelectric element, the p-type semiconductor film is used for a light absorption layer. |
