SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which has a structure which allows easy manufacturing even though it is miniaturized and which can inhibit deterioration in electrical characteristics associated with miniaturization; and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device has a structure in which a source electrode layer and a drain electrode layer are formed on a top face of an oxide semiconductor layer in which: a lateral face of the oxide semiconductor layer and a lateral face of the source electrode layer are flush with each other; and the lateral face of the oxide semiconductor layer and the lateral face of the source electrode layer and first wiring are electrically connected with each other by a side contact; and the lateral face of the oxide semiconductor layer and a lateral face of the drain electrode layer are flush with each other; and the lateral face of the oxide semiconductor layer and the lateral face of the drain electrode layer and second wiring are electrically connected with each other by a side contact.