发明名称 SCALABLE ORTHOGONAL SPIN TRANSFER MAGNETIC RANDOM ACCESS MEMORY DEVICES WITH REDUCED WRITE ERROR RATES
摘要 A magnetic device includes a pinned polarizing magnetic layer having a magnetic vector parallel to a plane of the pinned polarizing magnetic layer. The magnetic device also includes a free layer, separated from the polarizing magnetic layer by a first non-magnetic layer, having a magnetization vector with a changeable magnetization direction. The changeable magnetization vector is configured to change to a first state upon application of a first current of a first polarity and to change to a second state upon application of a second current of a second, opposite polarity. The magnetic device also has a reference layer having a magnetic vector perpendicular to the plane of the reference layer and separated from the free layer by a second non-magnetic layer.
申请公布号 US2014367812(A1) 申请公布日期 2014.12.18
申请号 US201313919466 申请日期 2013.06.17
申请人 New York University 发明人 Kent Andrew
分类号 H01L43/02;H01L27/22 主分类号 H01L43/02
代理机构 代理人
主权项 1. A magnetic device comprising: a pinned polarizing magnetic layer having a magnetic vector parallel to a plane of the pinned polarizing magnetic layer; a free layer, separated from the polarizing magnetic layer by a first non-magnetic layer, having a magnetization vector with a changeable magnetization direction, wherein the changeable magnetization vector has a state that changes to a first state upon application of a first current of a first polarity and to change that changes to a second state upon application of a second current of a second, opposite polarity; and a reference layer having a magnetic vector perpendicular to the plane of the reference layer and separated from the free layer by a second non-magnetic layer, wherein the reference layer and the pinned polarizing magnetic layer balances an amplitude of current required to change the changeable magnetization vector state such that the amplitude of the first current is significantly the same as the amplitude of the second current, and wherein the reference layer comprises: a first magnetic layer that has a first magnetization vector oriented perpendicular to the first magnetic layer; and a second magnetic layer, separated from the first magnetic layer by a reference layer non-magnetic layer, that has a second magnetization vector oriented perpendicular to the second magnetic layer and opposite of the first magnetization vector, wherein widths of the first magnetic layer and the second magnetic layer are different and balance the amplitude of current required to change the changeable magnetization vector state.
地址 New York NY US