METHODS OF FORMING TRANSISTORS WITH RETROGRADE WELLS IN CMOS APPLICATIONS AND THE RESULTING DEVICE STRUCTURES

摘要

A method includes forming a layer of silicon-carbon on an N-active region, performing a common deposition process to form a layer of a first semiconductor material on the layer of silicon-carbon and on the P-active region, masking the N-active region, forming a layer of a second semiconductor material on the first semiconductor material in the P-active region and forming N-type and P-type transistors. A device includes a layer of silicon-carbon positioned on an N-active region, a first layer of a first semiconductor positioned on the layer of silicon-carbon, a second layer of the first semiconductor material positioned on a P-active region, a layer of a second semiconductor material positioned on the second layer of the first semiconductor material, and N-type and P-type transistors.

主权项

1. A device, comprising:
a substrate comprised of an N-active region and a P-active region; a layer of silicon-carbon positioned on an upper surface of said N-active region; a first layer of a first semiconductor material positioned on said layer of silicon-carbon; a second layer of said first semiconductor material positioned on an upper surface of said P-active region; a layer of a second semiconductor material positioned on said second layer of said first semiconductor material; an N-type transistor positioned above said N-active region; and a P-type transistor positioned above said P-active region.