SEMICONDUCTOR LIGHT-EMITTING DEVICE AND FABRICATING METHOD THEREOF

摘要

A semiconductor light-emitting device including an epitaxial structure, a first electrode structure, a second electrode structure, a light reflective metal layer, a resistivity-enhancing structure and a protection ring is provided. The light-emitting epitaxial structure has a first surface and a second surface. The light-emitting epitaxial structure has a first zone and a second zone. The first electrode structure is disposed within the first zone. The second electrode structure is disposed within the second zone. The light reflective metal layer is disposed adjacent to the second surface. The resistivity-enhancing structure is disposed in contact with a surface of the light reflective metal layer and corresponding to a position of the first electrode structure. The protection ring has a first portion and a second portion. The first portion surrounds a sidewall of the light reflective metal layer. The second portion corresponds to the second electrode structure.

主权项

1. A semiconductor light-emitting device, comprising:
a light-emitting epitaxial structure having a first surface and a second surface opposite to said first surface, wherein said light-emitting epitaxial structure has a first zone and a second zone enclosing said first zone; a first electrode structure disposed over said first zone and in electrically contact with said first surface; a second electrode structure disposed over said second zone and in electrically contact with said first surface; a light reflective metal layer disposed adjacent to said second surface; a resistivity-enhancing structure disposed adjacent to a surface of said light reflective metal layer and corresponding to a position of said first electrode structure, wherein said surface of said light reflective metal layer is away from said second surface; and a protection ring having a first portion and a second portion, wherein said first portion surrounds and contacts with a sidewall of said light reflective metal layer, wherein said second portion is corresponding to a position of said second electrode structure and in contact with said surface of said light reflective metal layer.