SEMICONDUCTOR OPTICAL EMITTING DEVICE WITH METALLIZED SIDEWALLS

摘要

A semiconductor optical emitting device comprises an at least partially transparent substrate, an active semiconductor structure, a dielectric layer and a metal layer. The substrate comprises a first surface, a second surface and at least one sidewall. The active semiconductor structure comprises a first surface, a second surface and at least one sidewall, the first surface of the active semiconductor structure facing the second surface of the substrate. The dielectric layer surrounds at least a portion of the at least one sidewall of the active semiconductor structure. The metal layer surrounds at least a portion of the dielectric layer. The at least one sidewall of the active semiconductor structure is tapered and a first portion of the at least one sidewall of the active semiconductor structure has a different tapering than a second portion of the at least one sidewall of the active semiconductor structure.

主权项

1. A semiconductor optical emitting device comprising:
an at least partially transparent substrate comprising a first surface and a second surface; an active semiconductor structure comprising a first surface, a second surface and at least one sidewall, the first surface of the active semiconductor structure facing the second surface of the substrate; a dielectric layer surrounding at least a portion of the at least one sidewall of the active semiconductor structure; and a metal layer surrounding at least a portion of the dielectric layer; wherein the at least one sidewall of the active semiconductor structure is tapered; wherein a first portion of the at least one sidewall of the active semiconductor structure has a different tapering than a second portion of the at least one sidewall of the active semiconductor structure; and wherein the active semiconductor structure comprises an active region proximate the second surface of the active semiconductor structure, the first portion of the at least one sidewall of the active semiconductor structure extending from the active region to the second surface of the active semiconductor structure.