| 发明名称 |
LIGHT-EMITTING DEVICE AND THE MANUFACTURING METHOD THEREOF |
| 摘要 |
A light-emitting device includes: a substrate including an upper surface, wherein the upper surface includes an ion implantation region; a semiconductor layer formed on the upper surface; a light-emitting stack formed on the semiconductor layer; and a plurality of scattering cavities formed between the semiconductor layer and the upper surface in accordance with the ion implantation region. |
| 申请公布号 |
US2014367692(A1) |
申请公布日期 |
2014.12.18 |
| 申请号 |
US201313918374 |
申请日期 |
2013.06.14 |
| 申请人 |
EPISTAR CORPORATION |
发明人 |
CHANG Shih Pang;HSU Ta Cheng;HSIEH Min Hsun |
| 分类号 |
H01L33/58;H01L33/32 |
主分类号 |
H01L33/58 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A light-emitting device, comprising:
a substrate comprising an upper surface, wherein the upper surface comprises an ion implantation region; a semiconductor layer formed on the upper surface; a light-emitting stack formed on the semiconductor layer; and a plurality of scattering cavities formed between the semiconductor layer and the upper surface in accordance with the ion implantation region. |
| 地址 |
Hsinchu TW |
