发明名称 |
METHOD OF OPERATING SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device is operated by, inter alia: programming selected memory cells by applying a first program voltage which is increased by a first step voltage to a selected word line and by applying a first pass voltage having a constant level to unselected word lines, and when a voltage difference between the first program voltage and the first pass voltage reaches a predetermined voltage difference, programming the selected memory cells by applying a second program voltage which is increased by a second step voltage lower than the first step voltage to the selected word line and by applying a second pass voltage which is increased in proportion to the second program voltage to first unselected word lines adjacent to the selected word line among the unselected word lines. |
申请公布号 |
US2014369131(A1) |
申请公布日期 |
2014.12.18 |
申请号 |
US201414472620 |
申请日期 |
2014.08.29 |
申请人 |
SK hynix Inc. |
发明人 |
ARITOME Seiichi |
分类号 |
G11C16/10 |
主分类号 |
G11C16/10 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
programming memory cells coupled to the selected word line by applying a first program voltage which is increased by a first step voltage to a selected word line and by applying an eleventh pass voltage which has a lower rate of increase in reference to that of the first program voltage to unselected word lines; andwhen a voltage difference between the first program voltage and the eleventh pass voltage reaches a predetermined voltage difference, programming the selected memory cells by applying a second program voltage which is increased by a second step voltage lower than the first step voltage to the selected word line and by applying a second pass voltage which is increased in proportion to the second program voltage to first unselected word lines adjacent to the selected word line among the unselected word lines. |
地址 |
Icheon-si KR |