| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
Disclosed is a semiconductor device, including: an active region defined in a shape extended in at least four different directions in a semiconductor substrate; and gates of first to fourth transistors formed on extended portions of the active region, respectively, in which the first to fourth transistors share one junction area. |
| 申请公布号 |
US2014369121(A1) |
申请公布日期 |
2014.12.18 |
| 申请号 |
US201314043908 |
申请日期 |
2013.10.02 |
| 申请人 |
SK hynix Inc. |
发明人 |
KIM Hyun Sub;PARK Jung Won |
| 分类号 |
H01L27/105;G11C16/04;G11C16/12;H01L27/088 |
主分类号 |
H01L27/105 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
an active region defined in a shape extended in at least four different directions in a semiconductor substrate; and gates of first to fourth transistors formed on extended portions of the active region, respectively, wherein the first to fourth transistors share one junction area. |
| 地址 |
Icheon-si Gyeonggi-do KR |
