发明名称 |
PHASE-CHANGE MEMORY CELLS |
摘要 |
Improved phase-change memory cells are provided for storing information in a plurality of programmable cell states. A phase-change material is located between first and second electrodes for applying a read voltage to the phase-change material to read the programmed cell state. An electrically-conductive component extends from one electrode to the other in contact with the phase-change material. The resistance presented by this component to a cell current produced by the read voltage is less than that of the amorphous phase and greater than that of the crystalline phase of the phase-change material in any of the cell states. |
申请公布号 |
US2014369114(A1) |
申请公布日期 |
2014.12.18 |
申请号 |
US201414296570 |
申请日期 |
2014.06.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Kim SangBum;Krebs Daniel;Lam Chung Hon;Pozidis Charalampos |
分类号 |
H01L45/00;G11C13/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
1. A phase-change memory cell for storing information in a plurality of programmable cell states, the phase-change memory cell comprising:
a phase-change material located between a first electrode and a second electrode for applying a read voltage to said phase-change material to read a programmed cell state; and an electrically-conductive component extending from said first electrode to said second electrode and in contact with said phase-change material; wherein the resistance presented by said electrically-conductive component to a cell current produced by said read voltage is less than that of the amorphous phase and greater than that of the crystalline phase of said phase-change material. |
地址 |
Armonk NY US |