Low-Temperature Sidewall Image Transfer Process Using ALD Metals, Metal Oxides and Metal Nitrides

摘要

A SIT method includes the following steps. An SIT mandrel material is deposited onto a substrate and formed into a plurality of SIT mandrels. A spacer material is conformally deposited onto the substrate covering a top and sides of each of the SIT mandrels. Atomic Layer Deposition (ALD) is used to deposit the SIT spacer at low temperatures. The spacer material is selected from the group including a metal, a metal oxide, a metal nitride and combinations including at least one of the foregoing materials. The spacer material is removed from all but the sides of each of the SIT mandrels to form SIT sidewall spacers on the sides of each of the SIT mandrels. The SIT mandrels are removed selective to the SIT sidewall spacers revealing a pattern of the SIT sidewall spacers. The pattern of the SIT sidewall spacers is transferred to the underlying stack or substrate.

主权项

1. A Sidewall Image Transfer (SIT) method, the method comprising the steps of:
depositing an SIT mandrel material onto a substrate; forming a patterned resist on the SIT mandrel material, wherein the patterned resist has a line pattern defined therein; transferring the line pattern from the patterned resist to the SIT mandrel material, forming a plurality of SIT mandrels; conformally depositing a spacer material onto the substrate covering a top and sides of each of the SIT mandrels, wherein the spacer material is selected from the group consisting of a metal, a metal oxide, a metal nitride and combinations comprising at least one of the foregoing materials; removing the spacer material from all but the sides of each of the SIT mandrels to form SIT sidewall spacers on the sides of each of the SIT mandrels; removing the SIT mandrels selective to the SIT sidewall spacers revealing a pattern of the SIT sidewall spacers; and transferring the pattern of the SIT sidewall spacers to the substrate.