SIMPLIFIED NONVOLATILE MEMORY CELL STRING AND NAND FLASH MEMORY ARRAY USING THE SAME

摘要

The present invention provides a nonvolatile memory cell string and a NAND flash memory array using the same. According to the present invention, a wall type semiconductor separated into twin fins can increase the degree of integration and basically prevent the interferences between adjacent cells. And gate electrodes formed to cover depletion regions between the channel and source regions or between the channel and drain regions enable GIDL to be used for a memory operation without GSL and CSL which are necessarily needed in the conventional NAND flash memory array and can significantly increase the degree of integration.

主权项

1. A nonvolatile memory cell string comprising:
two or more cell devices formed in series on a wall type semiconductor protruded from a semiconductor substrate with a predetermined length along one direction to form the cell string, wherein one end of the cell string is electrically connected to outside through a string selection transistor formed on one end of the wall type semiconductor, and wherein the other end of the cell string is floated and not electrically connected to outside.