| 发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE |
| 摘要 |
The method for fabricating a semiconductor device is to fabricate a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes a step of forming a gate insulating film. In the step, at least one film selected from the group consisting of a SiO2 film and an Al2O3 film is formed on a nitride layer containing GaN by using microwave plasma and the formed film is used as at least a part of the gate insulating film. |
| 申请公布号 |
US2014367699(A1) |
申请公布日期 |
2014.12.18 |
| 申请号 |
US201414474835 |
申请日期 |
2014.09.02 |
| 申请人 |
TOHOKU UNIVERSITY ;FUJI ELECTRIC CO., LTD. ;TOKYO ELECTRON LIMITED |
发明人 |
TERAMOTO Akinobu;KAMBAYASHI Hiroshi;UEDA Hirokazu;MOROZUMI Yuichiro;HARADA Katsushige;HASEBE Kazuhide;OHMI Tadahiro |
| 分类号 |
H01L21/02;H01L29/20;H01L29/205;H01L21/28;H01L23/00;H01L29/51;H01L29/778 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device including GaN that composes a semiconductor layer comprising:
a nitride layer containing GaN that composes the semiconductor layer; and a gate insulating film formed on the nitride layer, wherein the gate insulating film includes at least one film selected from the group consisting of a SiO2 film formed by using microwave plasma generated with microwaves at a frequency of 2.45 GHz by using a radial line slot antenna and an Al2O3 film formed with microwave plasma generated with microwaves at a frequency of 2.45 GHz by using the radial line slot antenna. |
| 地址 |
Sendai-shi JP |
