FORMATION OF GROUP III-V MATERIAL LAYERS ON PATTERNED SUBSTRATES

摘要

Methods of epitaxy of gallium nitride, and other such related films, and light emitting diodes on patterned sapphire substrates, and other such related substrates, are described.

主权项

1. A semiconductor device, comprising:
a patterned sapphire substrate having a plurality of discrete pyramids thereon, each pyramid having approximately the same dimensions, wherein the spacing between pyramids correlates with the diameter of each pyramid; and a group III-V material disposed on the patterned sapphire substrate, continuous between and on each of the discrete pyramids, wherein the group III-V material has a lateral dimension in alignment with a [112-0] or a [101-0] plane of the patterned sapphire substrate and a vertical dimension in alignment with a [0001] plane of the patterned sapphire substrate.