| 发明名称 |
LIGHT EMITTING DEVICE AND LIGHTING SYSTEM |
| 摘要 |
A light emitting device includes a first electrode layer (87), a second conductive semiconductor layer (13) on the first electrode layer (87), an active layer (12) on the second conductive semiconductor layer (13), and a first conductive semiconductor layer (11) on the active layer (12). An AlyGa1-yN layer (where, 0<y≦1) (16) is provided over the first conductive semiconductor layer (11), and an InxGa1-xN pattern (where, 0<x≦1) (15) is provided over the AlyGa1-yN layer (16). A gallium nitride semiconductor layer (14) is provided over the InxGa1-xN pattern (15); and a pad electrode (81) is provided on the gallium nitride semiconductor layer (14). |
| 申请公布号 |
US2014367637(A1) |
申请公布日期 |
2014.12.18 |
| 申请号 |
US201414303157 |
申请日期 |
2014.06.12 |
| 申请人 |
CHOI Eun Sil |
发明人 |
CHOI Eun Sil |
| 分类号 |
H01L33/24;H01L33/46;H01L33/06 |
主分类号 |
H01L33/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A light emitting device comprising:
a first electrode layer; a second conductive semiconductor layer on the first electrode layer; an active layer on the second conductive semiconductor layer; a first conductive semiconductor layer on the active layer; an AlyGa1-yN layer (where, 0<y≦1) on the first conductive semiconductor layer; an InxGa1-xN pattern (where, 0<x≦1) on the AlyGa1-yN layer; a gallium nitride semiconductor layer on the InxGa1-xN pattern; and a pad electrode on the gallium nitride semiconductor layer. |
| 地址 |
Seoul KR |
