| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a transistor having excellent electric characteristics and high reliability, and to provide a display device using the transistor.SOLUTION: A transistor is a bottom-gate transistor formed by using an oxide semiconductor for a channel region, uses an oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment as an active layer. The active layer comprises a first region of a micro-crystallized surface layer part and a second region of the rest part. By using the oxide semiconductor layer having such structure, change to an n-type, which is due to reentry of moisture from the surface layer part or detachment of oxygen, and generation of a parasitic channel, can be suppressed. Contact resistance between the surface layer part and a source electrode, and between the surface layer part and a drain electrode can be reduced.</p> |
