SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a plurality of conductive layers and a plurality of insulating layers formed alternately with each other, at least one channel layer passing through the plurality of conductive layers and the plurality of insulating layers, and at least one first charge blocking layer surrounding the at least one channel layer, wherein a plurality of first regions, interposed between the at least one channel layer and the plurality of conductive layers, and a plurality of second regions, interposed between the at least one channel layer and the plurality of insulating layers, are alternately defined on the at least one first charge blocking layer, and each of the plurality of first regions has a greater thickness than each of the plurality of second regions.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming first material layers and second material layers alternately with each other; forming at least one hole passing through the first and second material layers; forming a sacrificial layer in the at least one hole; oxidizing a first surface of the sacrificial layer exposed through the hole to a predetermined thickness; forming recessed regions by removing the first material layers; and oxidizing a second surface of the sacrificial layer exposed through the recessed regions.