发明名称 |
RELIABLE ELECTRICAL FUSE WITH LOCALIZED PROGRAMMING AND METHOD OF MAKING THE SAME |
摘要 |
An electrical fuse has an anode contact on a surface of a semiconductor substrate. The electrical fuse has a cathode contact on the surface of the semiconductor substrate spaced from the anode contact. The electrical fuse has a link within the substrate electrically interconnecting the anode contact and the cathode contact. The link comprises a semiconductor layer and a silicide layer. The silicide layer extends beyond the anode contact. An opposite end of the silicide layer extends beyond the cathode contact. A silicon germanium region is embedded in the semiconductor layer under the silicide layer, between the anode contact and the cathode contact. |
申请公布号 |
US2014370671(A1) |
申请公布日期 |
2014.12.18 |
申请号 |
US201414454041 |
申请日期 |
2014.08.07 |
申请人 |
International Business Machines Corporation |
发明人 |
Li Yan Zun;Li Zhengwen;Pei Chengwen;Yu Jian |
分类号 |
H01L23/62;H01L21/768;H01L21/285;H01L23/525;H01L21/8238;H01L21/02 |
主分类号 |
H01L23/62 |
代理机构 |
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代理人 |
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主权项 |
1. A method for making an electrical fuse, the method comprising the steps of:
dividing a silicon substrate into a first region, a second region adjacent to the first region, and a third region adjacent to the second region, using shallow trench isolation; creating a first recess in the first region and a second recess in the second region, using reactive ion etching; growing silicon germanium in the first recess and the second recess; forming silicide in the first region, above the silicon germanium grown in the first recess; and forming an anode contact and a cathode contact in the first region adjoining the silicide. |
地址 |
Armonk NY US |