发明名称 Method of Manufacturing a Printable Composition of a Liquid or Gel Suspension of Diodes
摘要 An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. An exemplary method of making a liquid or gel suspension of diodes comprises: adding a viscosity modifier to a plurality of diodes in a first solvent; and mixing the plurality of diodes, the first solvent and the viscosity modifier to form the liquid or gel suspension of the plurality of diodes. Various exemplary diodes have a lateral dimension between about 10 to 50 microns and about 5 to 25 microns in height. Other embodiments may also include a plurality of substantially chemically inert particles having a range of sizes between about 10 to about 50 microns.
申请公布号 US2014370629(A1) 申请公布日期 2014.12.18
申请号 US201414471739 申请日期 2014.08.28
申请人 NthDegree Technologies Worldwide Inc. 发明人 Lowenthal Mark David;Ray William Johnstone;Shotton Neil O.;Blanchard Richard A.;Oraw Brad;Lewandowski Mark Allan;Baldridge Jeffrey;Perozziello Eric Anthony
分类号 H01L33/56;H01L33/00 主分类号 H01L33/56
代理机构 代理人
主权项 1. A method of making a liquid or gel suspension of diodes, the method comprising: adding at least one viscosity modifier to a plurality of diodes in at least one solvent; and mixing the plurality of diodes, the at least one solvent and the at least one viscosity modifier to form the liquid or gel suspension of the plurality of diodes, each diode of the plurality of diodes comprising: a light emitting or absorbing region having a lateral dimension between about 10 microns to 40 microns and a height between about 2 to 7 microns; a first terminal coupled to the light emitting or absorbing region on a first side, the first terminal having a height less than about 6 microns; and a second terminal coupled to the light emitting or absorbing region on a second side opposite the first side, the second terminal having a height less than about 6 microns; wherein each diode of the plurality of diodes has a lateral dimension between about 10 to 50 microns and a height between about 5 to 25 microns; and wherein each diode of the plurality of diodes comprises at least one inorganic semiconductor selected from the group consisting essentially of: silicon, gallium arsenide (GaAs), gallium nitride (GaN), GaP, InAlGaP, AlInGaAs, InGaNAs, and AlInGaSb, and mixtures or combinations thereof.
地址 Tempe AZ US