发明名称 |
Monolithic Integrated Composite Group III-V and Group IV Semiconductor Device and IC |
摘要 |
There are disclosed herein various implementations of a monolithic vertically integrated composite device. Such a composite device may include one or more group IV device fabricated in a group IV semiconductor body formed over a first side of a double sided substrate, and one or more group III-V device fabricated in a group III-V semiconductor body formed over a second side of the double sided substrate opposite the first side. In one implementation, the one or more group IV device may be a PN junction diode or a Schottky diode. In another implementation, the one or more group IV device may be a field-effect transistor (PET). In yet another implementation, such a composite device monolithically integrates one or more group III-V device and a group IV integrated circuit (IC). The one or more group III-V device and one or more group IV device and/or IC may be electrically coupled using one or more of a substrate via and a through-wafer via. |
申请公布号 |
US2014367744(A1) |
申请公布日期 |
2014.12.18 |
申请号 |
US201414472974 |
申请日期 |
2014.08.29 |
申请人 |
International Rectifier Corporation |
发明人 |
Briere Michael A. |
分类号 |
H01L27/06;H01L29/20;H01L29/778;H01L29/78;H01L29/861;H01L29/16;H01L23/535 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
1. A monolithic vertically integrated composite device comprising:
a group IV diode fabricated in a group IV semiconductor body formed over a first side of a double sided substrate; a group III-V device fabricated in a group III-V semiconductor body formed over a second side of said double sided substrate opposite said first side; said group IV diode being electrically coupled to said group III-V device. |
地址 |
El Segundo CA US |