发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent a power device from malfunctioning, or suppress an increase in manufacturing cost.SOLUTION: In a semiconductor device for driving a power device for power supply, buffer circuits and a level shift circuit comprise transistors of the same polarity. Furthermore, a capacitive element is provided in the level shift circuit, and a signal to be boosted is applied to the capacitive element and the signal is boosted by capacitive coupling of the capacitive element. The transistors constituting the semiconductor device can thus be unipolar transistors. A further capacitive element is provided in the level shift circuit between wiring for applying a potential for boosting a signal for driving the power transistor and wiring for applying a low supply potential, so that the signal can be boosted.
申请公布号 JP2014239424(A) 申请公布日期 2014.12.18
申请号 JP20140095593 申请日期 2014.05.05
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 TAKAHASHI KEI
分类号 H03K17/08 主分类号 H03K17/08
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