发明名称 THERMOELECTRIC TRANSDUCER
摘要 <p>PROBLEM TO BE SOLVED: To achieve a high performance thermoelectric transducer with an inexpensive material and a manufacturing method.SOLUTION: The thermoelectric transducer uses a nano-sheet composed of a transition metal chalcogenide material as an electromotive film deposited on a magnetic material layer. The transition metal chalcogenide film is a composite composed of transition metal such as W, Nb, Ta, Mo, Ti, and Hf and a chalcogen element such as S, Se, and Te, and has a layered structure having electrical conduction properties anisotropic in a two-dimensional plane direction (electric conductivity is especially high in a direction parallel to a film surface).</p>
申请公布号 JP2014239158(A) 申请公布日期 2014.12.18
申请号 JP20130121052 申请日期 2013.06.07
申请人 NEC CORP 发明人 KIRIHARA AKIHIRO;ISHIDA MASAHIKO;KAWAMOTO SHIGERU
分类号 H01L29/82;H01L35/16;H01L35/18;H01L35/22;H01L35/32;H01L37/00 主分类号 H01L29/82
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