| 发明名称 |
Multi-layer compound precursor with CuSe thermal conversion to Cu2-xSe for two-stage CIGS solar cell absorber synthesis |
| 摘要 |
Fabricating a layered precursor includes depositing a first film including a first indium gallium selenide compound on a substrate; then depositing a second film including a first CuSe compound; then heating the substrate, the first film and the second film to convert the first CuSe compound in the second film to a first Cu2-xSe (0=<x<1) compound; and then depositing a third film including a indium gallium selenide compound. A layered precursor includes a substrate; a first film coupled to the substrate, the first film including a first indium gallium selenide compound; a second film coupled to the first film, the second film including a first Cu2-xSe where (0=<x<=1) compound; and a third film coupled to the second film, the third film including a second indium gallium selenide compound. |
| 申请公布号 |
US2014366946(A1) |
申请公布日期 |
2014.12.18 |
| 申请号 |
US201313919100 |
申请日期 |
2013.06.17 |
| 申请人 |
HelioVolt Corporation |
发明人 |
Sang Baosheng;Lu Dingyuan;Miller Roy M.;Martinez Casiano R.;Stanbery Billy J. |
| 分类号 |
H01L31/0336;H01L31/18 |
主分类号 |
H01L31/0336 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising fabricating a layered precursor including:
depositing a first film including a first indium gallium selenide compound on a substrate; then depositing a second film including a first CuSe compound; then heating the substrate, the first film and the second film to convert the first CuSe compound in the second film to a first Cu2-xSe (0=<x<1) compound; and then depositing a third film including a indium gallium selenide compound. |
| 地址 |
Austin TX US |
