METHODS OF FORMING SEMICONDUCTOR DEVICES INCLUDING LOW-K DIELECTRIC LAYER

摘要

Methods of forming a dielectric layer are provided. The methods may include introducing oxygen radicals and organic silicon precursors into a chamber to form a preliminary dielectric layer on a substrate. Each of the organic silicon precursors may include a carbon bridge and a porogen such that the preliminary dielectric layer may include carbon bridges and porogens. The methods may also include removing at least some of the porogens from the preliminary dielectric layer to form a porous dielectric layer including the carbon bridges.

主权项

1. A method of forming a semiconductor device, comprising:
introducing a plasma and organic silicon precursors into a chamber to form a preliminary dielectric layer on a wafer, wherein the plasma comprises oxygen radicals generated from an external plasma generator that is outside the chamber, the organic silicon precursors comprise carbon bridges and porogens, and the preliminary dielectric layer comprises the porogens; and forming a porous dielectric layer by removing at least some of the porogens from the preliminary dielectric layer.