| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND OPERATION METHOD THEREOF |
| 摘要 |
A semiconductor memory device includes a memory cell suitable for having a predetermined cell state based on a data stored therein, a control signal generation unit suitable for generating a control signal for changing the cell state of the memory cell during a reading operation, an information storage unit suitable for storing a variation status information of the control signal to which a moment when the cell state of the memory cell changes is reflected, and an output unit suitable for outputting the variation status information of the control signal stored in the information storage unit as a signal corresponding to the data stored in the memory cell. |
| 申请公布号 |
US2014369128(A1) |
申请公布日期 |
2014.12.18 |
| 申请号 |
US201314106574 |
申请日期 |
2013.12.13 |
| 申请人 |
Industry-University Cooperation Foundation Hanyang University ;SK hynix Inc. |
发明人 |
CHOI Sung-Wook;HAM Jung-Hoon;KIM Young-Il;LEE Sang-Sun |
| 分类号 |
G11C16/26;G11C16/24;G11C16/04 |
主分类号 |
G11C16/26 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor memory device, comprising:
a memory cell suitable for having a predetermined cell state based on a data stored therein; a control signal generation unit suitable for generating a control signal for changing the cell state of the memory cell during a reading operation; an information storage unit suitable for storing a variation status information of the control signal to which a moment when the cell state of the memory cell changes is reflected; and an output unit suitable for outputting the variation status information of the control signal stored in the information storage unit as a signal corresponding to the data stored in the memory cell. |
| 地址 |
Seoul KR |
