| 发明名称 |
SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING THE SAME, AND MEMORY SYSTEM INCLUDING THE SEMICONDUCTOR DEVICE |
| 摘要 |
Semiconductor device, method for fabricating the same and electronic devices including the semiconductor device are provided. The semiconductor device comprises an interlayer insulating layer formed on a substrate and including a trench, a gate electrode formed in the trench, a first gate spacer formed on a side wall of the gate electrode to have an L shape, a second gate spacer formed on the first gate spacer to have an L shape and having a dielectric constant lower than that of silicon nitride, and a third spacer formed on the second gate spacer. |
| 申请公布号 |
US2014369115(A1) |
申请公布日期 |
2014.12.18 |
| 申请号 |
US201414155651 |
申请日期 |
2014.01.15 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
KIM Kook-Tae;KIM Young-Tak;SON Ho-Sung;WON Seok-Jun;YI Ji-Hye;LEE Chul-Woong |
| 分类号 |
H01L29/78;G11C11/40 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
an interlayer insulating layer formed on a substrate and including a trench; a gate electrode formed in the trench; a first gate spacer formed on a side wall of the gate electrode to have an L shape; a second gate spacer formed on the first gate spacer to have an L shape and having a dielectric constant lower than the dielectric constant of silicon nitride; and a third spacer formed on the second gate spacer. |
| 地址 |
Gyeonggi-do KR |
