发明名称 ENCAPSULATING LAYER-COVERED SEMICONDUCTOR ELEMENT, PRODUCING METHOD THEREOF, AND SEMICONDUCTOR DEVICE
摘要 A method for producing an encapsulating layer-covered semiconductor element includes the steps of preparing a support sheet including a hard support board formed with a through hole passing through in a thickness direction and a pressure-sensitive adhesive layer laminated on a surface at one side in the thickness direction of the support board so as to cover the through hole; disposing a semiconductor element on a surface at one side in the thickness direction of the pressure-sensitive adhesive layer in opposed to the through hole in the thickness direction; covering the semiconductor element with an encapsulating layer to produce an encapsulating layer-covered semiconductor element; and inserting a pressing member into the through hole from the other side in the thickness direction to peel the encapsulating layer-covered semiconductor element from the pressure-sensitive adhesive layer.
申请公布号 US2014367729(A1) 申请公布日期 2014.12.18
申请号 US201414476881 申请日期 2014.09.04
申请人 NITTO DENKO CORPORATION 发明人 EBE Yuki;KATAYAMA Hiroyuki;KIMURA Ryuichi;ONISHI Hidenori;FUKE Kazuhiro
分类号 H01L33/50;H01L33/60;H01L33/52 主分类号 H01L33/50
代理机构 代理人
主权项 1. An encapsulating layer-covered semiconductor element comprising: an LED and a phosphor sheet, wherein the phosphor sheet is made of a phosphor resin composition containing a curable resin and a phosphor, and the phosphor sheet is disposed so that at least the side surfaces of the LED are covered.
地址 Osaka JP