METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

This method for manufacturing a silicon carbide semiconductor device comprises: a step for preparing a silicon carbide substrate on which an epitaxial layer is formed (S10); a step for forming an upper layer film on the epitaxial layer (S20); and a step for removing at least a part of the upper layer film in the outer peripheral portion of the silicon carbide substrate and patterning the upper layer film (S30).