Gate Insulator Loss Free Etch-Stop Oxide Thin Film Transistor

摘要

A method is provided for fabricating a thin-film transistor (TFT). The method includes forming a semiconductor layer over a gate insulator that covers a gate electrode, and depositing an insulator layer over the semiconductor layer, as well as etching the insulator layer to form a patterned etch-stop without losing the gate insulator. The method also includes forming a source electrode and a drain electrode over the semiconductor layer and the patterned etch-stop. The method further includes removing a portion of the semiconductor layer beyond the source electrode and the drain electrode such that a remaining portion of the semiconductor layer covers the gate insulator in a first overlapping area of the source electrode and the gate electrode and a second overlapping area of the drain electrode and gate electrode.

主权项

1. A method of fabricating a thin-film transistor (TFT), the method comprising:
forming a semiconductor layer over a gate insulator that covers a gate electrode; depositing an insulator layer over the semiconductor layer; and etching the insulator layer to form a patterned etch-stop without losing the gate insulator. forming a source electrode and a drain electrode over the semiconductor layer and the patterned etch-stop; and removing a portion of the semiconductor layer beyond the source electrode and the drain electrode such that a remaining portion of the semiconductor layer covers the gate insulator in a first overlapping area of the source electrode and the gate electrode and a second overlapping area of the drain electrode and gate electrode.